Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
نویسندگان
چکیده
منابع مشابه
Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...
متن کاملModeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
Energetic ion bombardment during plasma etching of microelectronics devices is necessary to activate chemical process and define features through the ions’ anisotropic trajectories. These energetic fluxes can also cause damage and mixing of the constituents of crystalline lattices. These properties are likely best modeled using molecular dynamics (MD) simulations. The computational expense of t...
متن کاملStudy of C4F8 ÕN2 and C4F8 ÕArÕN2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC
We report the effect of N2 addition to C4F8 and C4F8 /Ar discharges on plasma etching rates of organosilicate glass ~OSG! and etch stop layer materials (Si3N4 and SiC!, and the results of surface chemistry studies performed in parallel. N2 addition exhibits different effects in C4F8 and C4F8 /Ar plasmas, which may be explained by a higher plasma density, electron temperature, and possibly, the ...
متن کاملEffect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma.
The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase ch...
متن کاملSurface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.
The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon di...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2016
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4954961